डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1414-5L | Microwave Power GaAs FET FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 37.5dBm at 14.0GHz to 14.5GHz ・HIGH GAIN
G1dB= 6.0dB at 14.0GHz to 14.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-5L |
Toshiba |
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TIM1414-5-252 | POWER GAAS FET | Toshiba Semiconductor |
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TIM1414-5L | Microwave Power GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |