TIM1414-10LA डाटा शीट PDF( Datasheet )

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz

www.DataSheet4U.com TOSHIBA Oct. 1999 TIM1414-10LA-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Effi