डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TIM1011-4L | MICROWAVE POWER GaAs FET www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM1011-4L
TECHNICAL DATA FEATURES
HIGH POWER P1dB=36.5dBm at 10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD |
Toshiba Semiconductor |
|
TIM1011-4L | MICROWAVE POWER GaAs FET | Toshiba Semiconductor |
|
TIM1011-4UL | MICROWAVE POWER GaAs FET | Toshiba |
www.DataSheet.in | 2017 | संपर्क |