डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
THN6501 | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC |
AUK |
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THN6501F | SiGe NPN Transistor Semiconductor
□ Application
LNA and wide band amplifier up to GHz range
□ Features
o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA
o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = |
AUK |
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