डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TH58NYG3S0HBAI6 | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM TH58NYG3S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NYG3S0HBAI6 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Er |
Toshiba |
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TH58NYG3S0HBAI6 | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM | Toshiba |
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TH58NYG3S0HBAI4 | 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |