डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI5867-50L | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI5867-50L
FEATURES
・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER
Pout= 47.0dBm at Pin= 39.0dBm ・HIGH GAIN
GL= 13.5dB at 5.85GHz to 6.75GHz ・LOW INTERMODULATION DISTORTION
IM |
Toshiba |
|
TGI5867-50L | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |