डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TC58BYG0S3HBAI6 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM TC58BYG0S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1 GBIT (128M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BYG0S3HBAI6 is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically E |
Toshiba |
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TC58BYG0S3HBAI6 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM | Toshiba |
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TC58BYG0S3HBAI4 | 1-GBIT (128M x 8 BIT) CMOS NAND E2PROM | Toshiba |
www.DataSheet.in | 2017 | संपर्क |