SW226N डाटा शीट PDF( Datasheet )

SAMWIN TO-251 TO-252 SW226N N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.3ohm 1 2 3 1 2 3 2 Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typical 30nC) ■ Improved dv

SW226N PP0640SA - PP3500SC N-CHANNEL POWER MOSFET DESCRIPTION This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fa

SAMWIN SW226NV Features IPAK DPAK ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typical 34nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 2 13 1. Gate 2. Drain