SW10N60 डाटा शीट PDF( Datasheet )

SAMWIN SW10N60 N-channel MOSFET BVDSS : 600V ID : 10.0A RDS(ON) : 0.75ohm 1 2 1 3 2 2 3 1 3 Features ■ High ruggedness ■ RDS(ON) (Max 0.75Ω)@VGS=10V ■ Gate Charge (Typ 37nC) ■ Improved dv/dt Capabil

SAMWIN SW10N60D N-channel TO-220F MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 1.1Ω)@VGS=10V ■ Gate Charge (Typical 35nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 23 BV

SAMWIN SW10N60K N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.5Ω)@VGS=10V ■ Gate Charge (Typical 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220F 1 2 3 BVDSS : 6