STW26NM60 डाटा शीट PDF( Datasheet )

N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh™Power MOSFET TYPE STW26NM60 n n n n n STW26NM60 VDSS 600 V RDS(on) < 0.135 Ω ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CA

STW26NM60N-H N-channel 600 V, 0.135 Ω , 20 A TO-247 MDmesh™ II Power MOSFET Features Type STW26NM60N-H ■ ■ ■ VDSS 600 V RDS(on) max < 0.165 Ω ID 20 A 100% avalanche tested Low input capacitance

STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω , 20 A MDmesh™ II Power MOSFET 2 2 in D PAK, I PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Feat

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) ·100% avalanche tested ·Mini

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 3 1 D2 PAK TA

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max) ·100% avalanche tested ·Mini