STD3NM60N डाटा शीट PDF( Datasheet )

STD3NM60N N-channel 600 V, 1.6 Ω, 3.3 A, MDmesh™ II Power MOSFET in DPAK package Datasheet — preliminary data Features Order codes STD3NM60N VDSS @TJmax 650 V RDS(on) max. < 1.8 Ω ID 3.3 A ■ 100%

Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 3.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·100% avalanche tested ·L