STB20NM60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Min

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW2

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh™ Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW2

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Min

www.DataSheet4U.com STB20NM60A-1 STP20NM60A - STF20NM60A N-CHANNEL 650V@Tjmax - 0.25Ω - 20A I²PAK/TO-220/TO-220FP MDmesh™ MOSFET TYPE STB20NM60A-1 STP20NM60A STF20NM60A s s s s VDSS @Tjmax 650 V 650 V 6

STB20NM60D N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh™ Power MOSFET General features Type STB20NM60D ■ VDSS 600V RDS(on) <0.29Ω ID 20A Pw 45W High dv/dt and avalanche capabilities tested 1 3 www.

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Min