डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPU30P06P | P-Channel MOSFET isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variat |
INCHANGE |
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SPU30P06P | P-Channel MOSFET | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |