SPP80N06S2-09 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor SPP80N06S2-09 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot varia

www.DataSheet4U.com SPP80N06S2-09 SPB80N06S2-09 Product Summary VDS R DS(on) ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 9.1 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175