डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SPP04N60C3 | TO-251 N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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SPP04N60C3 | Power Transistor 6331& 63$1&
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Infineon |
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SPP04N60C3 | TO-220C N-Channel MOSFET isc N-Channel MOSFET Transistor
SPP04N60C3,ISPP04N60C3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |