No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
(SMPxx) Transient Voltage Suppressors • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Available in uni-directional • 400 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Very fast response time • Low incremental su |
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InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors – 2.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 0.01 – 0.01 – 0.01 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 30 – 30 – 30 – 30 – 30 – 15 – 30 – 30 – 20 – 30 – 20 – 20 |
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InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors – 2.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 0.01 – 0.01 – 0.01 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 30 – 30 – 30 – 30 – 30 – 15 – 30 – 30 – 20 – 30 – 20 – 20 |
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InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors – 2.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 0.01 – 0.01 – 0.01 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 30 – 30 – 30 – 30 – 30 – 15 – 30 – 30 – 20 – 30 – 20 – 20 |
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Vishay Siliconix |
(SMPxx) Transient Voltage Suppressors • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Available in uni-directional • 400 W peak pulse power capability with a 10/1000 µs waveform • Excellent clamping capability • Very fast response time • Low incremental su |
|
|
|
Vishay Siliconix |
(SMPxx) Transient Voltage Suppressors • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Available in uni-directional • 400 W peak pulse power capability with a 10/1000 μs waveform • Excellent clamping capability • Very fast response time • Low incremental su |
|
|
|
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors – 2.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 0.01 – 0.01 – 0.01 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 1.0 – 30 – 30 – 30 – 30 – 30 – 15 – 30 – 30 – 20 – 30 – 20 – 20 |
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