SI2315BDS डाटा शीट PDF( Datasheet )

P-Channel 1.8-V (G-S) MOSFET Si2315BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.050 at VGS = - 4.5 V - 12 0.065 at VGS = - 2.5 V 0.100 at VGS = - 1.8V ID (A) - 3.85 - 3.4 - 2.7 FEATURES

isc P-Channel MOSFET Transistor Si2315BDS ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤52mΩ@VGS= -4.5V; ID= -3.8A ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot