| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A |
|
|
|
|
Hitachi Semiconductor |
Silicon NPN Transistor down voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark hFE1 EA 60 to 120 VCE(sat) VBE EB 100 to 200 60 30 — — EC V V I C = 0.5 A, IB = 50 |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
Winbond |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations |
|
|
|
|
STMicroelectronics |
RF & MICROWAVE TRANSISTORS m SD1420 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO hFE DYNAMIC Symbol IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V VCE = 5 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = |
|
|
|
|
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|
|
|
|
ETC |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations • • • - !" • • • • • • • • 7 ! . 4 5 / ! |
|