डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCT30N120 | Silicon carbide Power MOSFET SCT30N120
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package
Datasheet - production data
Features
Very tight variation of on-resistance vs. temperature
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STMicroelectronics |
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SCT30N120 | Silicon carbide Power MOSFET | STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |