डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
SCT20N120 | Silicon carbide Power MOSFET SCT20N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package
HiP247
3 2
1
D(2, TAB)
Features
• Very tight variation of on-resistance vs. temperature � |
STMicroelectronics |
|
SCT20N120AG | Automotive-grade silicon carbide Power MOSFET SCT20N120AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
• AEC-Q101 qualified • Very tight vari |
STMicroelectronics |
www.DataSheet.in | 2017 | संपर्क |