SCT10N120 डाटा शीट PDF( Datasheet )

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package 3 2 1 HiP247™ D(2, TAB) Features • Very tight variation of on-resistance vs. temperature

SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very tight variation of