S23 डाटा शीट PDF( Datasheet )

SS22-S210 SS22 - S210 Features • • • Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. SM

S2301 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 80mW 40A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to

S2303 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200 80m 40A*1 Datasheet Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple t

S2305 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 450mW 10A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to

S2306 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 160mW 22A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to

S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to

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