| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Toshiba |
Silicon PNP Epitaxial Type Transistor e Collector current Collector power dissipation Junction temperature Storage temperature range RN2601 to RN2606 RN2601 to RN2604 RN2605, RN2606 RN2601 to RN2606 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 C −5 |
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