डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJP60D0DPK | Silicon N-Channel IGBT Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT High Speed Power Switching
Features
Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. |
Renesas |
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RJP60D0DPE | N-Channel IGBT | Renesas |
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RJP60D0DPM | N-Channel IGBT | Renesas |
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RJP60D0DPK | Silicon N-Channel IGBT | Renesas |
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RJP60D0DPP-M0 | Silicon N-Channel IGBT | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |