डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6024DP3-A0 | High Speed Power Switching MOS FET RJK6024DP3-A0
600 V - 0.4 A - MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
• Low leakage current • High speed switching
Outl |
Renesas Technology |
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RJK6024DP3-A0 | High Speed Power Switching MOS FET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |