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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK6006DPD | Silicon N Channel MOS FET High Speed Power Switching Preliminary www.DataSheet4U.com Datasheet
RJK6006DPD
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) � |
Renesas Technology |
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RJK6006DPP-A0 | Power MOSFET | Renesas |
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RJK6006DPD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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RJK6006DPP-E0 | N-Channel Power MOSFET | Renesas |
www.DataSheet.in | 2017 | संपर्क |