डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching Preliminary www.DataSheet4U.com Datasheet
RJK5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low |
Renesas Technology |
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RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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RJK5012DPP | Silicon N-Channel MOSFET | Renesas Technology |
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www.DataSheet.in | 2017 | संपर्क |