डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RJK03R4DPA | Built in SBD Dual N-channel Power MOS FET Preliminary Datasheet
RJK03R4DPA
MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
R07DS0888EJ0110 Rev.1.10
Oct 29, 2012
Featu |
Renesas Technology |
|
RJK03R4DPA | Built in SBD Dual N-channel Power MOS FET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |