डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
RFL1N10 | 1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs Semiconductor
RFL1N08, RFL1N10
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Description
These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such |
Intersil Corporation |
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RFL1N10L | 1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET RFL1N10L
September 1998
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use wit |
Intersil Corporation |
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