डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
R8002ANJ | Power MOSFET R8002ANJ
Nch 800V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 62W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant
lOu |
ROHM |
|
R8002ANJ | N-Channel MOSFET isc N-Channel MOSFET Transistor
R8002ANJ
FEATURES ·Drain Current –ID= 24A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.3Ω(Max) ·100% avalanche test |
INCHANGE |
|
R8002ANJFRG | Power MOSFET R8002ANJ FRG
Nch 800V 2A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
800V 4.3Ω ±2A 62W
lFeatures
1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating |
ROHM |
www.DataSheet.in | 2017 | संपर्क |