डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
P10N60 | SGP10N60 SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 |
Infineon Technologies Corporation |
|
P10N60C | FQP10N60C FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
April 2007
QFET ®
Features
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Lo |
Fairchild Semiconductor |
www.DataSheet.in | 2017 | संपर्क |