डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NX7361JB-BC | LASER DIODE NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
FEATURES
• HIGH OUTPUT POWER: Pf = 150 mW at IFP = 1000 mA PW = 10 ms, Duty = 1% • LONG WAVELENGTH: λC = 131 |
CEL |
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NX7361JB-BC | LASER DIODE | CEL |
www.DataSheet.in | 2017 | संपर्क |