NVD5117PL डाटा शीट PDF( Datasheet )

NVD5117PL MOSFET – Power, Single, P-Channel -60 V, 16 mW, -61 A Features • Low RDS(on) to Minimize Conduction Losses • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified �

isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100% avalanche tes