NTE13 डाटा शीट PDF( Datasheet )

NTE13 Silicon NPN Transistor Low Voltage Output Amp Features: D Low Collector–Emitter Saturation Voltage D High DC Current Gain D An M Type Mold package that Allows Downsizing of Equipment and Automatic Inser

NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for gen

NTE1300 Integrated Circuit TV Remote Control Description: The NTE1300 is a silicon monolithic integrated circuit in an 8–Lead SIP type package designed for use as a Frequency Servo Control System for tape rec

NTE1301 Integrated Circuit AM/FM IF Description: The NTE1301 is a silicon monolithic integrated circuit in a 7–Lead SIP type package designed for the AM/FM IF amplifier of a radio receiver. Two differential a

NTE131 (PNP) & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package

NTE1312 Integrated Circuit Vertical OSC, Amp Description: The NTE1312 is a silicon monolithic integrated circuit in a 14–Lead DIP type package designed for use in TV vertical oscillator, sync circuits. It inc

NTE1315 Integrated Circuit Module − 2 Power, 2 Channel AF Power Amplifier, 35W Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Supply Voltage, VCCmax . . . . . . . . . . . . .