NTE11 डाटा शीट PDF( Datasheet )

NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low

NTE1100 Integrated Circuit TV Sound IF Amp, FM IF Amp Features: D High Power Gain: GP = 69dB (Typ) D Good Limiter Characteristic: VIN (lim) = 600µV (Typ) D High Output Voltage: VOM = 800V (Typ) D Wide Frequenc

NTE1101 Integrated Circuit General Purpose Amp, Mixer, and Oscillator Features: D General Amplifier Circuit D High Frequency Amplifier D Mixer, OSC and Modulator D Video Amplifier D Recommend RF and IF Amplifie

NTE1102 Integrated Circuit 3 Stage Audio Amplifier Features: D Recommended for Driver of Push–Pull Output Stage D Possible to Drive 4 Watt Output Stage D Wide Range of Supply Voltage Absolute Maximum Ratings:

NTE1103 Integrated Circuit General Purpose, Low Noise Preamplifier Features: D Low Noise D Wide Operating Supply Voltage Range: VCC = 3V to 12V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

NTE1104 Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter Applications: D For FM IF Amplifier D For TV SIF Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, V

NTE110A Germanium Diode General Purpose Features: D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Reverse Voltag