| No. | Partie # | Fabricant | Description | Fiche Technique |
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Renesas |
N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.) • Built-in Gate protection diode ORDERING INFORM |
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