डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NE681 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz
NE681 SERIES
• HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 |
NEC |
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NE68119 | NPN SILICON EPITAXIAL TRANSISTOR DATA SHEET
SILICON TRANSISTOR
NE68119
/
2SC5007 JEITA Part No.
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
1.6±0.1-OUT 1.0 0.5 0.5
0.2–+00.1
DESCRIPTION The NE68119 / 2SC5007 is an N |
CEL |
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NE68130 | NPN SILICON RF TRANSISTOR DATA SHEET
NPN SILICON RF TRANSISTOR
NE68130
/
2SC4227 JEITA Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN SUPER MINIMOLD
DISCONTINUED
DESCRIPTION
The NE68 |
CEL |
|
NE68133 | SILICON TRANSISTOR DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68133
/
2SC3583
JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
+0.1UT −0.05
1.1PHASEto1.4 0.3
DESCRIPTION The NE68133 / 2SC3583 |
CEL |
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NE68139 | SILICON TRANSISTOR DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68139
/
2SC4094 JEITA Part No.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
2.9±0.2 UT (1.8) 0.85 0.95
1.1−+00..12 PHASE0.8 |
CEL |
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NE681M03 | NPN SILICON TRANSISTOR DISCONTINUED
NEC's NPN SILICON TRANSISTOR NE681M03
FEATURES
• NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF perf |
CEL |
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NE681M13 | NPN SILICON TRANSISTOR DISCONTINUED
NEC's NPN SILICON TRANSISTOR NE681M13
FEATURES
• NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for |
CEL |
www.DataSheet.in | 2017 | संपर्क |