| No. | Partie # | Fabricant | Description | Fiche Technique |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V (Typ:5.2mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation |
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