MMST3906 डाटा शीट PDF( Datasheet )

Production specification PNP Silicon Epitaxial Planar Transistor FEATURES  Power dissipation.  Epitaxial planar die construction.  Complementary to MMST3904.  Also available in lead free version.

PNP General Purpose Transistor MMST3906 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type available(MMST3904) MECHANICAL DATA • Case: SOT-323 Plastic • Case materi

SMD Type PNP Transistors MMST3906 (MMST3906) ■ Features ● Epitaxial planar die construction ● Complementary to MMST3904 Transistors 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25�

Features  BVCEO > -40V  IC = -200mA Collector Current  Epitaxial Planar Die Construction  Ultra-Small Surface Mount Package  Complementary NPN Type: MMST3904  Totally Lead-Free & Fully RoHS Co

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) MMST3906 FEATURES * Power dissipation Pcm: 0.2 W (Tamb=25OC) * Collector current Icm: -0.2 A * Collector-base voltage

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMST3906 Features • Epitaxial Planar Die Construction

Transistors www.DataSheet4U.com (SPEC-A38) 609 Transistors www.DataSheet4U.com UMT3906/SST3906/MMST3906/2N3906 FElectrical characteristic curves 610 Transistors www.DataSheet4U.com UMT3906/SST3906/MMST3