MMD60R900Q डाटा शीट PDF( Datasheet )

MMD60R900Q Datasheet MMD60R900Q 600V 0.90Ω N-channel MOSFET  Description MMD60R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate

isc N-Channel MOSFET Transistor MMD60R900QRH FEATURES ·Drain Current : ID= 4.4A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.9Ω(Max) ·100% avalanche