MMBT2369 डाटा शीट PDF( Datasheet )

NPN General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ultra-small surface mount package. Pb Lead-free Production specification MMBT2369 APPLICATIONS z Use as a medium power amplifier

MMBT2369 / MMBT2369A MMBT2369 / MMBT2369A NPN Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage Version 2006-06-02 2.9 ±0.1 0.4 3 Type Code 1

MMBT2369 / PN2369 — NPN Switching Transistor MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from

MMBT2369 / MMBT2369A NPN Silicon Switching Transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter

www.DataSheet4U.com General Purpose Transistors COMCHIP SMD Diodes Specialist MMBT2369-G (NPN) RoHS Device Features -Power dissipation P C =0.3W 0.056(1.40) 0.047(1.20) SOT-23 0.119(3.00) 0.110(2.80) 3 Ma

MMBT2369A【NPN Transistors/ 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ For Switching and Amplifier Applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter

MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 15V • Collector current IC = 200mA �