MMBT2222 डाटा शीट PDF( Datasheet )

NPN EPITAXIAL SILICON TRANSISTOR MMBT2222/ALT1 GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc(max)=225mW Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic

MMBT2222/MMBT2222A GENERAL PURPOSE NPN TRANSISTORS FEATURES  HIGH DC CURRENT GAIN  EPITAXIAL PLANAR DIE CONSTRUCTION  COMPLEMENTARY PNP YTPE AVAILABLE(MMBT2907A)  PB FREE PRODUCT ARE AVAILABLE :98.5

MMBT2222 / MMBT2222A MMBT2222 / MMBT2222A NPN Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage Version 2006-05-15 2.9 ±0.1 0.4 3 Type Code 1

REPLACEMENT TYPE : MMBT2222 FEATURES  Genernal Purpose Amplifier HABT2222(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage

MMBT2222 Rev.E Nov.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 集电极电流可达到 600mA

NPN GENERAL PURPOSE AMPLIFIER „ FEATURES *Epitaxial planar die construction *Complementary PNP Type available(MMBT2907) „ ORDERING INFORMATION Device Package Shipping† MMBT2222 SOT −23 3000 / Tape &