MMBR901 डाटा शीट PDF( Datasheet )

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMBR901 Description • High Current-Gain – Bandwidth Products • Low Noise Figure @ f=1.0GHz – NF(matched)=1.9dB

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO v CBO v EBO 'C THERMAL CHARACTERISTICS Characteristic Symbol "Total

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR901L DESCRIPTION ·Low Noise ·High Power Gain- Gpe = 12.0 dB TYP. @ f = 1 GHz APPLICATIONS ·Designed for use in high gai

MMBR901LT1 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 直流电流增益高，功�

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise small–signal amplifiers for