डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE803 | SILICON NPN POWER DARLINGTON TRANSISTORS MJE802 MJE803
SILICON NPN POWER DARLINGTON TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration an |
ST Microelectronics |
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MJE803 | NPN Epitaxial Silicon Darlington Transistor MJE800/801/802/803
MJE800/801/802/803
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703
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TO-12 |
Fairchild |
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MJE803 | 4.0 AMPERE DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE700/D
PNP
Plastic Darlington Complementary Silicon Power Transistors
. . . designed for general–purpose amplifier and low–speed switching |
Motorola |
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MJE803 | DARLINGTON POWER TRANSISTORS www.DataSheet4U.com
MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
These devices are designed for general−purpose amplifier and low� |
ON |
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MJE803 | (MJE800 - MJE803) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APP |
SavantIC |
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MJE803 | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 2A = 100(Min) @ IC= 4A
·Complement to Type MJE7 |
INCHANGE |
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MJE803 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium pow |
Central Semiconductor |
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