डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE701 | PNP Epitaxial Silicon Darlington Transistor MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in BaseEmitter Resistors
• High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC • Complement to MJE800/801/802/803
1
TO- |
Fairchild |
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MJE701 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A
·Complement to Type |
INCHANGE |
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MJE701 | COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJE700 THRU MJE703 PNP MJE800 THRU MJE803 NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium pow |
Central Semiconductor |
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MJE701T | POWER TRANSISTOR MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medi |
Central Semiconductor |
|
MJE701T | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60 V ·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A
·Complement to Type |
INCHANGE |
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