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Pan Jit International |
20 AMPERES SCHOTTKY BARRIER RECTIFIERS • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • Guardring fo |
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Thinki Semiconductor |
20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers Standard MBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Aud |
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Unisonic Technologies |
20A SCHOTTKY BARRIER RECTIFIER * High surge capability * High efficiency * High current capability * Low power Loss and low forward voltage drop SYMBOL DIODE ORDERING INFORMATION Ordering Number Lead Free Halogen Free MBR2060CL-TA3-T MBR2060CG-TA3-T MBR2060CL-TF1-T MB |
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Digitron Semiconductors |
20A SCHOTTKY RECTIFIERS Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive rev |
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ON Semiconductor |
Switch-mode Power Rectifiers • Package Designed for Power Surface Mount Applications (D2PAK) • Center-Tap Configuration (D2PAK) • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Short Heat Sink Tab |
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ASEMI |
High-Voltage Schottky Diodes age Change ( at Rated VR ) Peak Repetitive Reverse Surge Current (2uS-1Khz) Operating Junction Temperature Storage Temperature Electricity Character Item Test Condition IR TJ =25℃ TJ =125℃ VR=VRRM VF TJ =25℃ TJ =125℃ IF=10A IF=10A *IF(AV)= |
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Xinghe Electronics |
Schottky Barrier Rectifiers |
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KD |
SCHOTTKY BARRIER RECTIFIER ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Dual rectifier construction, positive center tap ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● Guardring for overvoltage pro |
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CITC |
Trench Schottky Rectifier • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead free in compliance with EU RoHS. ■ Mechanical data • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220AB molded plastic body. • Termin |
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Vishay |
Dual Common Cathode Schottky Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material ca |
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Fairchild Semiconductor |
Schottky Rectifiers • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage, High-Frequency |
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Diodes |
20A SCHOTTKY BARRIER RECTIFIER and Benefits Guard Ring Die Construction for Transient Protection. High Surge Current Capability. Low Forward Voltage Drop. Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive a |
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CITC |
20A High Power Schottky Barrier Rectifiers ■ Outline • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction |
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SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER Applications 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation |
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Galaxy Semi-Conductor |
Schottky Rectifier GALAXY ELECTRICAL MBR2030CT - - - MBR2060CT VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal |
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General Semiconductor |
Schottky Rectifier ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center tap ♦ Metal silicon junction, majority carrier conduction ♦ Low power loss, high efficiency ♦ High current capability, low |
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American First Semiconductor |
Schottky Barrier Rectifier RREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.161 G 0.095 0.105 H 0.110 0.155 J 0.014 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 |
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VIKING TECH |
High Power Schottky Diode －For use in low voltage, high frequency inverters, free wheeling and polarity protection applications －Low power loss, high efficiency －High current capability, low forward voltage drop －High surge capability －Guardring for overvoltage protection －Ul |
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Taiwan Semiconductor |
Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL D |
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Thinki Semiconductor |
20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low vol |
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