| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Dual N-Channel MOSFET • Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A • Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability • Th |
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Fujitsu Media Devices |
Switching Regulator Controller • • • • • • • • • Wide supply voltage operating range: 1.8 to 15 V Low current consumption: Typically 5.5 mA in operation, 1 µA or less in stand-by High speed operation is possible: Maximum 1 MHz The error amplifier gain is set inside the IC, so peri |
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Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET RDS(ON) = 40 mΩ @ VGS = 10 V RDS(ON) = 51 mΩ @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability. RoHS Compliant Absolute Maximum Rati |
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