KTD998 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| KTD998 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
KTD998
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type KTB778 ·Minimum Lot-to-Lot variations for robust |
 Inchange Semiconductor |
|
| KTD998 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Recommended for 45 50W Audio Frequency Amplifier Output Stage. Complementary to KTB778.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collecto |
 KEC |
शेयर लिंक :
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