KTD1304 डाटा शीट PDF( Datasheet )

KTD1304 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features E-B 反向击穿电压高，反�

NPN Silicon Epitaxial Planar Transistor FEATURES z High emitter-base voltage. z High reverse hFE. z Low on resistance. Pb Lead-free APPLICATIONS z Audio muting application. Production specification KTD1304

KTD31 04 TRANSISTOR (NPN) SOT-23 FEATURES ·High emitter-base voltage ·low on resistance MARKING: MAX 1. BASE 2. EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEB

SMD Type NPN Transistors KTD1304 (KTD1304S) Transistors ■ Features ● High Emitter-Base Voltage :VEBO = 12V(Min) ● High Reverse hFE ● Low on Resistance +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0

Plastic-Encapsulate Transistors FEATURES • High emitter-base voltage • low on resistance Marking: MAX Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High emitter-base voltage. High reverse hFE. Low on resistance. Production specification KTD1304 Pb Lead-free www.DataSheet4U.com

SEMICONDUCTOR TECHNICAL DATA AUDIO MUTING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). Low on Resistance : RON=0.6 (Max.) (IB=1mA).