KTC4377 डाटा शीट PDF( Datasheet )

SMD Type Transistors Diodes IC Transistor T Product specification KTC4377 SOT-89 Unit:mm 1.50 ±0.1 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A 4.50±0.1 1.80±0.1

KTC4377 TRANSISTOR (NPN) FEATURES Low voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag

KTC4377 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features: * Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics. SOT-8

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High DC Current Gain and Excellent hFE Linearity Lead-free : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (

SMD Type Transistors Epitaxial Planar NPN Transistor KTC4377 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A SOT-89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0

REPLACEMENT TYPE : KTC4377 FEATURES  Low Voltage HETC4377 (NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 30 Co

RoHS KTC4377 KTC4377 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 2 Collector-base voltage A OV(BR)CBO: 30 V Operating and storage junction temperatur